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this is information on a product in full production. october 2012 doc id 14848 rev 3 1/12 12 STP150NF04 n-channel 40 v, 0.005 typ., 80 a stripfet?ii power mosfet in a to-220 package datasheet ? production data features 100% avalanche tested standard level gate drive applications switching applications description this power mosfet has been developed using stmicroelectronics? unique stripfet process, which is specifically designed to minimize input capacitance and gate charge. this renders the device suitable for use as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer applications, and applications with low gate charge driving requirements. figure 1. internal schematic diagram type v dss r ds(on) max i d STP150NF04 40 v < 0.007 80 a to-220 1 2 3 tab !-v $4!" ' 3 table 1. device summary order code marking package packaging STP150NF04 p150nf04 to-220 tube www.st.com
contents STP150NF04 2/12 doc id 14848 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP150NF04 electrical ratings doc id 14848 rev 3 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate- source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25 c 80 a i d (1) drain current (continuous) at t c = 100 c 80 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 300 w derating factor 2 w/c dv/dt (3) 3. i sd 80a, di/dt 300 a/s, v dd = 80%v (br)dss peak diode recovery voltage slope 2 v/ns e as (4) 4. starting tj = 25 c, i d = 40 a, v dd =30 v single pulse avalanche energy 0.6 j t stg storage temperature -55 to 175 c t j max. operating junction temperature table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz of cu thermal resistance junction-pcb max 35 c/w
electrical characteristics STP150NF04 4/12 doc id 14848 rev 3 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = 40 v v ds = 40 v @ t j = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs, i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 40 a 0.005 0.007 table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 15 a - 90 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f =1 mhz v gs =0 - 3650 1145 400 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =32 v, i d =80 a, v gs =10 v (see figure 14) - 118 20 45 150 nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 25 v, i d = 40 a r g =4.7 , v gs = 10 v (see figure 13) - 15 150 70 45 - ns ns ns ns
STP150NF04 electrical characteristics doc id 14848 rev 3 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 80 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) i sd = 80 a, v gs = 0 - 320 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 - 1.3 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt=100 a/s v dd = 25 v, t j = 150 c (see figure 15) - 73 170 4.6 ns nc a
electrical characteristics STP150NF04 6/12 doc id 14848 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance 0.1 1 10 100 i d (a) v d s (v) 0 1 1 1 . 0 hv42440 oper a tion in thi s are a i s limited b y m a x r d s (on) 100 s 1m s 10m s t j =150c t c =25c s ingle p u l s e 0 25 50 75 100 125 150 175 200 225 i d (a) 0 12 3 4567 8 9 v d s (v) hv42470 4v 5v 6v v g s =10v 0 25 50 75 100 125 150 175 200 225 i d (a) 0 12 3 4 56 7 8 9v g s (v) hv42475 v d s =10v 4.0 4.5 5.0 5.5 6.0 6.5 7.0 ( ) r d s (on) 0 10 20 3 0 40 50 60 70 8 0 i d (a) hv424 3 0 v g s =10v
STP150NF04 electrical characteristics doc id 14848 rev 3 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics 0 1000 2000 3 000 4000 5000 6000 7000 8 000 9000 c(pf) hv42420 ci ss co ss cr ss f=1mhz v g s =0 0 510 15 20 25 3 0 v d s (v) hv42410 v g s (th) ( norm) 0.60 0.70 0. 8 0 0.90 1.00 -75 -75 -50 -25 0 25 50 75 100 125 150 175 t j (c) i d =250 a v d s =v g s
test circuits STP150NF04 8/12 doc id 14848 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform
STP150NF04 package mechanical data doc id 14848 rev 3 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STP150NF04 10/12 doc id 14848 rev 3 figure 18. to-220 type a drawing 00159 88 _typea_rev_ s
STP150NF04 revision history doc id 14848 rev 3 11/12 5 revision history table 9. document revision history date revision changes 01-jul-2008 1 first release 25-sep-2009 2 inserted device in to-220. 04-oct-2012 3 updated title and description on the cover page. updated mechanical data.
STP150NF04 12/12 doc id 14848 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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